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Title:Deformation Potentials and Electron−Phonon Coupling in Silicon Nanowires
Authors:F. Murphy-Armando*, G. Fagas and J. C. Greer, 2010
Abstract: The role of reduced dimensionality and of the surface on electron−phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to “breathing modes” emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, an effect that cannot be predicted without the form we find for Si nanowire deformation potentials.
ICHEC Project:First Principles Simulation of Junction-less Carbon Nanotube Field Effect Transistors (CNT-FETs)
Publication:Nano Letters, 2010, 10 (3), pp 869–873
URL: http://dx.doi.org/10.1021/nl9034384
Keywords: Silicon nanowire; electron−phonon; deformation potentials; mobility; relaxation time
Status: Published

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